AI Patent Summary

Patent Document
#US12313476B2
TEMPERATURE SENSOR INTEGRATED IN A TRANSISTOR ARRAY
Abstract
A temperature sensor integrated in a transistor array, e.g., metal-oxide-semiconductor field-effect transistor (MOS- FET) array, is provided. The integrated temperature sensor may include a doped well region formed in a substrate (e.g., SiC substrate), a resistor gate formed over the doped well region, first and second sensor terminals conductively coupled to the doped well region on opposite sides of the resistor gate. The integrated temperature sensor includes a gate driver to apply a voltage to the resistor gate that affects a resistance of the doped well region below the resistor gate, and temperature analysis circuitry to determine a resistance of a conductive path passing through the doped well region, and determine a temperature associated with the transistor array. 21 Claims, 13 Drawing Sheets
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CPC G01K7/00
Confidence: High
Official Definition
Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
PHYSICS > MEASURING; TESTING > MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
AI Technology & Product Mapping
Technology Domain:
Thermal Sensing & Management Systems
Product Category:
Temperature Sensors & Thermal Monitors
Plain-English Summary:
Measuring temperature using electrical or magnetic components that change properties directly in response to heat.
Relation to Claims:
The patent discloses a temperature sensor integrated into a transistor array that uses electrical resistance changes to determine temperature.
CPC G01K7/16
Confidence: High
Official Definition
Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
PHYSICS > MEASURING; TESTING > MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
AI Technology & Product Mapping
Technology Domain:
Resistive Thermal Sensing
Product Category:
RTDs & Resistive Temperature Detectors
Plain-English Summary:
Measuring temperature by utilizing elements whose electrical resistance varies with temperature, such as resistors.
Relation to Claims:
The patent specifically includes a resistor gate and temperature analysis circuitry to determine the resistance of a conductive path passing through a doped well region to measure temperature.
CPC G01K7/01
Confidence: Medium
Official Definition
Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
PHYSICS > MEASURING; TESTING > MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
AI Technology & Product Mapping
Technology Domain:
Semiconductor Thermal Sensors
Product Category:
Silicon Bandgap Temperature Sensors
Plain-English Summary:
Measuring temperature using semiconductor components containing PN junctions, such as diodes or transistors.
Relation to Claims:
The patent integrates the temperature sensor directly within a transistor array (like MOSFETs) built on a substrate with doped well regions.
CPC H10D84/00
Confidence: High
Official Definition
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
ELECTRICITY > SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR > INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
AI Technology & Product Mapping
Technology Domain:
Semiconductor Device Fabrication & Integration
Product Category:
Integrated Circuits & Power Semiconductors
Plain-English Summary:
Electronic integrated devices fabricated directly within or on semiconductor wafers.
Relation to Claims:
The temperature sensor is structurally integrated directly into the semiconductor substrate alongside the transistor array.
CPC H10D84/101
Confidence: High
Official Definition
Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
ELECTRICITY > SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR > INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
AI Technology & Product Mapping
Technology Domain:
Smart Power Devices & Monolithic Integration
Product Category:
Smart Power Transistors & Intelligent Modules
Plain-English Summary:
Semiconductor devices that combine a primary power or switching component with secondary built-in auxiliary components on the same chip.
Relation to Claims:
The patent details a primary transistor array combined with a built-in temperature sensor and control circuitry on the same substrate.