AI Patent Summary

Patent Document
#US6103576A
United States Patent 115
Abstract
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Patent Classification & AI Product Mapping
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CPC H10D30/00
Confidence: High
Official Definition
Field-effect transistors [FET]
ELECTRICITY > SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR > INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
AI Technology & Product Mapping
Technology Domain:
Semiconductor Devices & Integrated Circuits
Product Category:
Discrete Transistors & Integrated Circuit Logic
Plain-English Summary:
Electronic switches and amplifiers that use an electric field to control the shape and conductivity of a channel of charge carriers in a semiconductor material.
Relation to Claims:
The patent relates to transistor architectures, specifically utilizing field-effect transistor principles as suggested by the title and general semiconductor manufacturing context.
CPC H10D30/60
Confidence: High
Official Definition
Insulated-gate field-effect transistors [IGFET]
ELECTRICITY > SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR > INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
AI Technology & Product Mapping
Technology Domain:
Semiconductor Devices & Integrated Circuits
Product Category:
MOSFET & CMOS Integrated Circuits
Plain-English Summary:
Field-effect transistors where the control gate electrode is electrically insulated from the semiconductor channel by an insulating layer, typically an oxide.
Relation to Claims:
The disclosure involves insulated-gate structures which form the fundamental building blocks of modern digital and analog integrated circuits.
CPC H10D30/68
Confidence: High
Official Definition
Floating-gate IGFETs
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AI Technology & Product Mapping
Technology Domain:
Non-Volatile Memory Architecture
Product Category:
Flash Memory Cells & Arrays
Plain-English Summary:
Insulated-gate field-effect transistors that include an electrically isolated conductive gate used to trap charge for long-term data storage.
Relation to Claims:
The patent deals with memory or specialized transistor designs incorporating floating gates, typically used for storing persistent digital data.
CPC H10D30/6891
Confidence: High
Official Definition
Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
ELECTRICITY > SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR > INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
AI Technology & Product Mapping
Technology Domain:
Flash Memory Architecture
Product Category:
Non-Volatile Memory Arrays
Plain-English Summary:
Floating-gate transistors where the physical geometry, dimensions, or relative spatial arrangement of the floating gate electrode are specifically engineered for performance optimization.
Relation to Claims:
The invention specifically focuses on structural modifications or unique physical layouts of the floating gate electrode within the semiconductor device.
CPC H10D64/00
Confidence: High
Official Definition
Electrodes of devices having potential barriers
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AI Technology & Product Mapping
Technology Domain:
Semiconductor Packaging & Interconnects
Product Category:
Semiconductor Device Components
Plain-English Summary:
Conductive contact elements and terminal structures used in semiconductor components that rely on internal energy barriers to control electrical current flow.
Relation to Claims:
The patent encompasses the structural design, placement, or material configuration of the electrodes associated with the semiconductor potential barrier devices.