AI Patent Summary

Patent Document
#US6122205A
United States Patent 115
Abstract
A system for reading a memory cell of a memory array at voltage levels lower than an erased threshold voltage of the memory array. The system uses a voltage regulator which is coupled to the memory array for charging a desired row of the memory array to a supply voltage. The voltage regulator is further used for clamping the desired row at a voltage level which is no higher than a maximum programmed threshold voltage of the memory array. The voltage regulator is able to perform these functions while consuming no DC current. A voltage booster is coupled to the voltage regulator and to the memory array. The voltage booster is used for raising the voltage level of the desired row to a voltage above the maximum erased threshold voltage of the memory cell. This allows the memory cell to be read at voltage levels which are lower than the threshold voltage of the memory array.
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Patent Classification & AI Product Mapping
Authoritative patent classification definitions mapped to real-world technology domains and commercial product categories.
CPC G11C8/00
Confidence: High
Official Definition
Arrangements for selecting an address in a digital store
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Non-Volatile Memory Architecture
Product Category:
Memory Integrated Circuits
Plain-English Summary:
Circuits and architectures used to select specific memory addresses or rows within a digital memory array.
Relation to Claims:
The patent involves selecting and controlling a desired row of a memory array via voltage regulation and boosting, mapping directly to address selection mechanisms.
CPC G11C8/08
Confidence: High
Official Definition
Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Memory Circuit Design
Product Category:
Memory Controllers & SoCs
Plain-English Summary:
Circuits that control the electrical signals delivered to the word lines of a memory array, including voltage boosting and regulation.
Relation to Claims:
The patent explicitly discloses a voltage regulator coupled to a memory array for charging and clamping a desired row, and a voltage booster for raising its voltage level, perfectly aligning with word line control and boosting circuits.
CPC G11C16/00
Confidence: High
Official Definition
Erasable programmable read-only memories
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Flash Memory Architecture
Product Category:
Non-Volatile Memory Arrays
Plain-English Summary:
Memory technologies that can be erased and reprogrammed, such as flash memory or EEPROM.
Relation to Claims:
The abstract discusses reading memory cells based on erased and programmed threshold voltages, which is characteristic of erasable programmable read-only memories.
CPC G11C16/02
Confidence: High
Official Definition
Erasable programmable read-only memories electrically programmable
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Flash Memory Architecture
Product Category:
Flash Memory Chips
Plain-English Summary:
Memory devices that can be electrically erased and programmed, commonly known as EEPROM or Flash memory.
Relation to Claims:
The reference to threshold voltages, erased states, and programmed states aligns with electrically erasable/programmable memory technology.
CPC G11C16/06
Confidence: High
Official Definition
Auxiliary circuits, e.g. for writing into memory
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Semiconductor Support Circuitry
Product Category:
Memory Management Integrated Circuits
Plain-English Summary:
Support circuits used alongside memory arrays to handle operations like reading, writing, erasing, and voltage generation.
Relation to Claims:
The patent relies on auxiliary components like a zero-DC-current voltage regulator and a voltage booster to facilitate reading operations, fitting auxiliary memory circuits.